The SPIRE Research Group
PIRE The Spin Triangle - Athens, Ohio; Hamburg, Germany; and Buenos Aires, Argentina: Advancing Nanospintronics and Nanomagnetism through a grant from NSF.
The Coupled Nanostructure Group
Experimental and theoretical investigations into coupling effects in nanostructures.
The Biomolecular Adhesion Research Group
Bioadhesions on the single cell-scale, using adhesions molecules as a link to the molecular scale supported by a NSF CAREER grant.
The Phase-Change Memory Materials Project
Experimental and theoretical studies of structure and phase transition behavior of Ge-Sb-Te nanowires for electrical memory applications.
The Transmembrane Protein Research Group
Study of transmembrane proteins for biomolecular logic and storage funded by a NSF grant.
The Rare Earth Doped Materials Research Group
Collaborating on the development of rare earth doped amorphous silicon carbide devices for novel photonics applications in the visible region.
The Amorphous Silicon Research Group
Collaboration regarding the development of numerical models to describe the optical loss mechanisms of hydrogen and nitrogen doped PECVD amorphous silicon materials.
The Microfludic Systems Group
Collaborating on the development and deployment of microfludic systems using soft-lithopraphy methods that involve Si molds and polymers. This work is partially funded by an NSF grant.
The Colloidal GaN Quantum Dots Group
Collaboration aimed at studying the optical properties of colloidal GaN quantum dots and the potential benefits of rare earth ion impurities.
The Metal Nanoparticles Group
Collaboration to study photothermal properties and applications of metal nanoparticles.
Materials World Network - Decoherence, Correlations and Spin in Nanostructures
Understanding of correlated electron behavior in different material systems, from magnetic adatoms and molecules on surfaces, carbon nanotubes and graphene, to quantum dots in semiconductors and other materials.
The III-Nitride Semiconductor Group
Concentration on the magnetic and luminescence properties of magnetic-doped III-nitride semiconductor quantum dots and thin film low dimensional structures.